The first-generation semiconductor materials are mainly silicon (Si) and germanium (Ge), which are suitable for data operation and storage;

The second-generation semiconductor materials are represented by compounds such as gallium arsenide (GaAs) and indium antimonide (InSb), which are mainly used in the field of information communication, including semiconductor lasers, optical fiber communications, broadband networks and other information transmission and storage;

The third-generation semiconductor materials are represented by silicon carbide (SiC) and gallium nitride (GaN). They have outstanding performance in the conversion of electricity and light, and are more efficient in microwave signal output. They can be widely used in lighting, display, and communications. field.

Compared with the first and second generation semiconductor materials, the third generation semiconductor materials have a wider band gap, higher breakdown electric field, higher thermal conductivity, higher electron saturation rate and higher radiation resistance. , More suitable for the production of high-temperature, high-frequency, anti-radiation and high-power devices, usually referred to as wide-bandgap semiconductor materials.